Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor

ABSTRACT

A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a remaining one of the three RF power sources and an applied magnetic field. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.60/728,178, filed Oct. 18, 2005.

BACKGROUND OF THE INVENTION

Technological advances in semiconductor device fabrication involvedramatic reduction in device feature size or critical dimension, so thatopenings formed between multiple insulated conductor layers, as oneexample, tend to be deeper and have greater aspect ratios. The presentinvention overcomes the difficulties in forming such structures bycontrolling the plasma ion density in the bulk plasma, the plasma ionenergy distribution in the plasma sheath and the ion dissociation in thebulk plasma can independently and simultaneously. The present inventiontherefore fulfills the need to implement plasma processes in which theselections of ion density, ion energy distribution and ion dissociationare made without limiting one another.

SUMMARY OF THE INVENTION

A method of processing a workpiece in a plasma reactor includes couplingRF power from at least three RF power source of three respectivefrequencies to plasma in the reactor, setting ion energy distributionshape by selecting a ratio between the power levels of a first pair ofthe at least three RF power sources, and setting ion dissociation andion density by selecting a ratio between the power levels of a remainingone of the three RF power sources and an applied magnetic field. Thethree respective frequencies can be an LF frequency, an HF frequency anda VHF frequency, wherein the first pair corresponds to the LF and HFfrequencies and the second pair corresponds to the HF and VHFfrequencies. Alternatively, the power sources comprise four RF powersources, and wherein the first pair corresponds to an HF frequency andan LF frequency and the second pair corresponds to a VHF frequency andanother frequency. In one embodiment, the second pair corresponds to anupper VHF frequency and a lower VHF frequency. The other frequency maybe coupled through an inductive source power applicator, a toroidalplasma source power applicator or a ceiling electrode. Or, all threefrequencies may be coupled through a wafer support pedestal of thereactor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a capacitively coupled plasma reactor with aplasma-resonant overhead electrode in which ion density, ion energydistribution and ion dissociation are independently controlled byseparately adjusting LF and HF dual bias power levels and a VHF sourcepower level.

FIG. 2 illustrates an embodiment of FIG. 1 in which ion energydistribution is adjusted by controlling dual LF and HF bias powersources while ion density and ion dissociation are adjusted bycontrolling VHF source power level and magnetic field strength.

FIG. 3 is a top view corresponding to FIG. 2.

FIG. 4 illustrates an embodiment of FIG. 1 in which ion energydistribution is adjusted by controlling dual LF and HF bias powersources while ion density and ion dissociation are adjusted bycontrolling upper frequency and lower frequency VHF source power levelsfed through a common fixed impedance match element.

FIG. 5 illustrates a reactor in which ion energy distribution isadjusted by controlling dual LF and HF bias power sources while iondensity and ion dissociation are adjusted by controlling upper frequencyand lower frequency VHF source power levels through separate fixedimpedance match elements.

FIG. 6 illustrates a reactor in which ion energy distribution isadjusted by controlling dual LF and HF bias power sources while iondensity and ion dissociation are adjusted by controlling a VHF sourcepower level applied to the overhead electrode and RF source power levelapplied to an inductive RF power applicator or coil antenna.

FIG. 7 depicts a first embodiment of the overhead electrode as asemiconductor electrode through which RF power can be inductivelycoupled.

FIG. 8 depicts a second embodiment of the overhead electrode of thereactor of FIG. 6 as slotted electrode through which RF power can beinductively coupled.

FIG. 9 depicts a reactor having a toroidal plasma source in which ionenergy distribution is adjusted by controlling dual LF and HF bias powersources at the wafer while ion density and ion dissociation are adjustedby controlling a VHF source power level applied to the overheadelectrode and RF source power level coupled through a reentrant conduitof the toroidal plasma source.

FIG. 10A is a graph comparing the RF power contributing to ion densitywith the power contributing to ion energy as a function of frequency.

FIG. 10B is a graph comparing ion energy distributions obtained atdifferent RF bias power frequencies for a single RF bias source.

FIG. 10C is a graph comparing ion energy distributions obtained withdual frequency bias sources for different power ratios of the twofrequencies.

FIGS. 11A and 11B are graphs comparing behaviors of ion dissociation andion density as functions of frequency.

FIG. 12 is a graph depicting the mean fluorocarbon molecular weight in aplasma containing a fluorocarbon gas as a function of ion dissociation.

FIG. 13 is a graph comparing molecular weight distribution in a plasmaat low ion dissociation and high ion dissociation.

FIG. 14 is a graph depicting the behavior of ion dissociation as afunction the power ratio between two different source power frequencies.

FIG. 15 illustrates a three-dimensional control space in which iondissociation, ion density and ion energy are three independent(orthogonal) control dimensions defining the space.

FIG. 16 depicts a first method for independently controlling ion energydistribution, ion density and ion dissociation using three RF powersources of different frequencies.

FIG. 17 depicts a second method for independently controlling ion energydistribution, ion density and ion dissociation using four RF powersources of different frequencies.

FIG. 18 is a three-dimensional graph depicting the simultaneousbehaviors of ion density and ion dissociation as functions of magneticfield strength.

FIG. 19 is a three-dimensional graph depicting the simultaneousbehaviors of ion density and ion dissociation as functions of VHF sourcepower level.

FIG. 20 depicts a method of independently controlling ion energydistribution, ion density and ion dissociation using a pair of RF biaspower sources, a VHF power source and a magnetic field.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1, a capacitively coupled reactor chamber 100 enclosesa wafer support pedestal 105 which may be an electrostatic chuck (ESC)upon which a semiconductor wafer 110 may be electrostatically clamped.The ESC includes an aluminum base layer 5 and an insulating layer orpuck divided by a mesh or grid electrode 15 into a lower puck layer 10and an upper puck layer 20. The edge of the chuck 105 may be enhancedwith a dielectric ring 115 resting in the same plane as the wafer 110supported on another dielectric ring 120. The ceiling of the chamber 100is an overhead conductive electrode 125 supported on the chamberconductive sidewall 127 by an annular conductive ring 127 a and adielectric ring 130 that insulates the electrode 125, the rings 127 a,130 and the electrode 125 forming an electrode assembly 126. The bottomsurface of the electrode 125 that faces the plasma may be a flat surface125 a or a curved surface 125 b for enhancing uniformity of plasma iondistribution. RF source power from an RF generator 150 is coupled to theelectrode 125 through an impedance matching stub 135 that functions as afixed impedance match element. The stub 135 consists of inner and outercoaxial conductors 135 a, 135 b, the inner stub conductor 135 a beingconnected to the electrode 125 through an inner conductive ring 135 a′and the outer stub conductor 135 b being connected to the groundedchamber sidewall ring 127 a through and outer conductive ring 135 b′.

The RF generator 150 is coupled to the stub via a 50-Ohm coaxial cable162 at a tap point 163 along the length of the stub that is located toprovide an impedance match. The inner and outer conductors of the cable162 are connected to the stub inner and outer conductors 135 a, 135 b,respectively. RF bias power is applied through an RF feed conductor 25to the ESC electrode 15 coupled to the RF feed conductor 25 at afeedpoint 25 a. An ESC clamping voltage 41 source applies a D.C. waferclamping voltage to the ESC electrode 15.

The overhead electrode 125 can be a gas distribution plate, in whichcase the electrode has plural gas injection orifices 140 with aninternal gas manifold 142 coupled through a conduit 144 in the hollowinterior of the stub 135 to a process gas supply 146. Similarly, thermaltransfer (coolant/heating) fluid can be coupled to circulation passages148 within the electrode 125 from a heating/cooling fluid source 149.The temperature of the electrostatic chuck (ESC) 105 can be controlledby a refrigeration loop that includes an internal evaporator 200contained inside the ESC base 5 and external refrigeration componentssuch as an accumulator 204, a compressor 206, a condenser 208 and anexpansion valve 210.

Radial distribution of the plasma ion density is adjusted by inner andouter external magnetic coils 60, 65 driven with separately adjustableD.C. currents of current sources 58, 59 under control of a plasmadistribution controller 57.

The impedance match space of the electrode-tuning stub combination 125,135 is dramatically expanded if the reactance of the electrode 125 ismatched to the reactance of plasma in the chamber 100 to form anelectrode-plasma resonant frequency at or near the VHF frequency of thesource power generator 150, and if the resonant frequency of the RFtuning stub 135 (determined by its length) is at or near this samefrequency. The resulting expansion in impedance match space renders thereactor performance virtually impervious to fluctuating conditions inthe plasma and electrical properties of the chamber interior surfaces.

A pair of RF generators 40 a, 40 b apply RF power through respectiveimpedance match elements 45 a, 45 b to the RF feed conductor 25. The RFpower output levels from the RF generators 150, 40 a, 40 b areindependently controlled by a process controller 300. Preferably, the RFgenerator 40 a has an RF output in the HF frequency range or just abovethe ion sheath transit frequency and sufficiently high to contribute tobulk ion density as well as sheath ion energy, which can be, forexample, 13.56 MHz. The RF generator 40 b preferably has an RF output inthe LF frequency range, or just below the ion sheath transit frequency,which can be, for example, 2 MHz. The RF generator 150 is preferably aVHF frequency sufficiently high to contribute to both bulk ion densityand ion dissociation with negligible or no contribution to ion energy.The process controller 300 adjusts ion energy, ion density and iondissociation separately as follows: ion energy is adjusted with minimalimpact on ion density and no impact upon ion dissociation by adjustingthe ratio of the power levels of the LF and HF generators 40 b, 40 a;ion dissociation is adjusted relative to ion density with little or noimpact upon ion energy by adjusting the ratio of the power levels of theHF and VHF generators 40 a, 150. This permits the adjustment of thethree parameters, ion energy, ion density, ion dissociation, in aseparate manner. However, these adjustments are not completelyindependent because the VHF power level (the generator 40 a) is involvedin both the ion energy and ion density adjustments.

Complete independence in adjusting the three parameters (energy,density, dissociation) is achieved by introducing a controllablemagnetic field to the plasma, which affects ion density exclusively.This feature, together with the LF, HF and VHF power sources 40 a, 40 b,150, enables the density and dissociation to be adjusted independentlyof one another and independently of the ion energy. For this purpose,the reactor of FIG. 1 may be modified to include magnetic coils 501,502, 503, 504 in orthogonal relationship having independent currentinputs 501 a, 502 a, 503 a, 504 a controlled by a magnetic field currentcontroller 505. The controller 505 may provide extremely low frequencycurrents (e.g., 10 Hz) to the inputs 501 a, 502 a, 503 a, 504 a, andthese may be offset in phase from one another. In the presence of plasmaRF source power (i.e., the VHF power applied by the VHF generator 150),the plasma ion density can be increased or decreased withoutsignificantly affecting the other parameters (or without affecting themat all) by increasing or decreasing the currents to the magnetic coils501-504. If the VHF generator 150 has a sufficiently high frequency(e.g., 100-300 MHz or more), then it affects both the ion dissociationand ion density. These can therefore be adjusted together, with aseparate independent adjustment of the density being performed byadjusting the magnetic field alone.

In the embodiment of FIG. 4, the function of the magnetic field (toprovide an independent adjustment of ion density) is performed, instead,by a second VHF frequency applied either to the overhead electrode 125(from a VHF generator 150′ shown in solid line) or to the ESC electrode15 (from a VHF generator 40 c shown in dashed line). This second VHFfrequency is sufficiently below that of the first VHF generator 150(e.g., below 300 MHz) so that its principal effect is upon ion densitywith very little or no effect upon ion dissociation (or at least lesseffect than that of the first VHF generator). For example, the upper VHFfrequency of the first VHF generator 150 may be about 160 MHz while thelower VHF frequency of the second generator 150′ (or 40 c) may be about60 MHz. If the second VHF generator 150′ is employed for this purpose,then it may be coupled through the same impedance matching stub 135 asthe first generator 150, but at a different tap point 163′ that producesan impedance match at the different frequency of the second VHFgenerator 150′. The tap locations 163, 163′ depicted in FIG. 4 are notshown to scale and their location and order may be different from thatshown. If the second VHF frequency is applied to the ESC electrode 15,then the second VHF generator 40 c is coupled to the RF feed rod 25through an impedance match 45 c. In this case, all three impedance matchunits 45 a, 45 b, 45 c have their outputs connected to the RF feedconductor 25.

While FIG. 4 shows how the two VHF frequencies may be applied to theoverhead electrode 125 through a common impedance match element 135,FIG. 5 illustrates the case in which the two VHF generators are coupledto the electrode through different impedance match elements 320, 325.

In the embodiments of FIGS. 4 and 5, ion energy and ion energydistribution is adjusted by controlling the power levels of the LF andHF generators 40 a, 40 b, while ion density and ion dissociation areindependently controlled by controlling the output power levels of thetwo VHF generators 150, 150′ (or the two VHF generators 150, 40 c in thealternative embodiment).

FIG. 6 shows how the RF power controlling dissociation (i.e., from thegenerator 150) can be applied to an inductively coupled power applicator350 (i.e., an overhead coil antenna) overlying the overhead electrode125. This requires that the overhead electrode 125 be of a type thatdoes not block inductively coupled RF power from the coil antenna 350.In order to permit inductive coupling of RF power through the electrode125, the electrode may be a solid disc (FIG. 7) formed of a dopedsemiconductive material such as silicon, as disclosed in U.S. Pat. No.6,444,084 to Kenneth Collins.

Alternatively, the electrode 125 may have a slotted structure, asillustrated in FIG. 8, in order to enable RF power to be inductivelycoupled through the electrode 125. The RF frequency applied to theinductive coil antenna 350 need not necessarily be a VHF frequency,because even at lower frequencies an inductively coupled plasma exhibitsa relatively high degree of dissociation. The frequency of the generator150 in FIG. 6 may be an HF frequency or even an LF frequency and stillhave significant impact upon dissociation. As an alternative, the VHFgenerator 150′ coupled to the overhead electrode may be replaced by aVHF generator 40 c(of the same frequency) coupled through an impedancematch 45 c to the ESC RF feed conductor 25. In the embodiment of FIG. 6,ion energy and ion energy distribution is adjusted by controlling thepower levels of the LF and HF generators 40 a, 40 b, while ion densityand ion dissociation are independently controlled by controlling theoutput power levels of the two generators 150, 150′ (or the two VHFgenerators 150, 40 c in the alternative embodiment).

FIG. 9 illustrates an embodiment in which the coil antenna 350 isreplaced by a toroidal RF power applicator 420 surrounding an externalreentrant hollow conduit 410 that forms a toroidal plasma current paththrough the process region between the electrode 125 and the wafer 110.The external reentrant hollow conduit 410 and the toroidal RF powerapplicator 420 constitute a toroidal plasma source. The RF generator 150is coupled through the impedance match element 325 to the toroidal RFpower applicator 420. The toroidal RF power applicator 420 consists of aring 422 formed of magnetic or magnetizable material (e.g., a magneticcore) and a conductive winding 424 wrapped around the ring and driven bythe RF impedance match 325. As indicated in dashed line, a second(identical) hollow reentrant conduit 410′ with a second toroidal RFpower applicator 420′ may be provided that is transverse to the firstconduit 420. The conduit 410 accesses the chamber 100 at each end of theconduit through ports in the enclosure that lie on opposing sides of theprocess region formed between the wafer 110 and the electrode 125. Thisfeature causes the toroidal plasma current to flow across the entirediameter of the wafer 110. The toroidal plasma current oscillates at thefrequency of the RF power source 150. In the embodiment of FIG. 9, ionenergy and ion energy distribution is adjusted by controlling the powerlevels of the LF and HF generators 40 a, 40 b, while ion density and iondissociation are independently controlled by controlling the outputpower levels of the two generators 150, 150′.

FIG. 10A is a graph comparing the RF power contributing to ion densitywith the power contributing to ion energy as a function of frequency ina plasma reactor. The graph indicates that there are three principalfrequency ranges: from 0 to about 13 MHz, nearly all the RF powercontributes to plasma ion energy. From about 13 MHz to about 65 MHz, thepower is divided between contributing to ion energy and contributing toion density. Above about 65 MHz, nearly all the RF power contributes toion density. The contributions to ion energy at and slightly below 13MHz produce a narrow ion energy distribution centered at thepeak-to-peak RF voltage. This ion energy distribution widens as the RFfrequency is reduced to or below the ion transit frequency, the highestfrequency at which ions in the sheath can follow the RF oscillations.The ion energy distribution has maximum width at the low frequency of 2MHz. These effects are depicted in FIG. 10B, which is a graph comparingion energy distributions obtained at different RF bias power frequenciesfor a single RF bias source. FIG. 10B shows that the widest ion energydistribution is obtained at the lowest frequency (2 MHz) and thenarrowest is obtained at the highest frequency (13 MHz). By mixing botha high and a low frequency, the energy distribution may be skewed towarda higher energy, as shown in FIG. 10C, which is a graph comparing ionenergy distributions obtained with dual frequency bias sources fordifferent power ratios of the two frequencies. The higher populationpeak is at an ion energy corresponding to the peak-to-peak voltage ofthe middle or high frequency (e.g., 13 MHz) source. The second higherpopulation peak corresponds to the lower frequency (e.g., 2 MHz) power.In accordance with a preferred embodiment of the present invention, theion energy distribution is adjusted to increase or decrease the highenergy ion population relative to the lower energy ion population byadjusting the ratio between the power levels of the low frequency (e.g.,2 MHz) power and the medium or high frequency (e.g., 13 MHz) powersource. The comparison of FIG. 10C shows that the low frequency (e.g., 2MHz) RF power contributes more to the ion population at higher energies,and that the converse is true for the high frequency (e.g., 13 MHz) RFpower. Thus, the width of the ion energy distribution and its highfrequency content is enhanced by increasing the ratio of low frequencypower to high frequency power. Moreover, FIG. 10C shows that as the HF(e.g., 13 MHz) power approaches zero, the predominant peak shifts to anever higher frequency. Therefore, the ion energy distribution isselected by adjusting the ratio between the low frequency and highfrequency power levels.

The control of dissociation and ion density is provided by adjusting thepower levels of respective sources having two different frequencieshaving different effects upon dissociation and density. The higher HF orlower VHF frequencies contribute significantly to ion density butcontribute very little to ion dissociation. This is shown in FIGS. 11Aand 11B, which are graphs comparing behaviors of ion dissociation andion density as functions of frequency. Frequencies in a lower range (upto f transition of FIG. 11B) greatly affect ion density (FIG. 11B) buthave little effect upon ion dissociation (FIG. 11A). The frequency (“ftransition”) bounding the two ranges is generally a VHF frequency whosevalue depends upon various process parameters, but may be on the orderof about 100 MHz.

FIG. 12 is a graph depicting the mean fluorocarbon molecular weight in aplasma containing a fluorocarbon gas as a function of ion dissociation.This illustrates one way of quantifying dissociation, and that is theaverage or mean molecular weight of a certain class of molecules (e.g.,fluorocarbon molecules) in the plasma. The lower the molecular weight,the greater the degree of dissociation. This concept reflects theresults of optical emission spectra (OES) data represented by FIG. 13,which is a graph comparing molecular weight distribution in a plasma atlow ion dissociation and high ion dissociation. At lower dissociation,the population peaks coincide with more complex molecules, while thereverse is true for higher dissociation. Applying the results of FIGS.11A and 11B to a two-source frequency system, the dissociation anddensity of a plasma can be controlled separately by controlling theratio between the power levels of the higher and lower frequency sourcepower generators (both of which may be VHF generators). This is depictedin FIG. 14, which is a graph depicting the behavior of ion dissociationas a function the power ratio between two different source powerfrequencies. Using the three-frequency approach of FIG. 1 or thefour-frequency approach of FIGS. 2-5, a three-dimensional control spaceis realized along three independent (i.e., orthogonal) axes representingion energy, ion density and ion dissociation. FIG. 15 illustrates such athree-dimensional control space in which ion dissociation in the bulkplasma, ion density in the bulk plasma and ion energy in the plasmasheath are three independent (orthogonal) dimensions defining thecontrol space.

Preferably, then, the frequencies of the two generators 40 a, 150 ofFIG. 1 controlling ion density and ion dissociation lie on either sideof f transition. Or, if they lie on the same side, then they aresufficiently different from one another so that one of them influencesion dissociation more than the other. The one influencing primarily iondensity is the lower VHF frequency and the one influencing iondissociation and density is the upper VHF frequency. These upper andlower VHF frequencies may or may not lie above and below (respectively)“f transition”. As a result, by separately controlling the twofrequencies, different values of ion density and ion dissociation may beselected at least nearly independently. The same is true of the twofrequencies of the generators 150, 150′ of FIGS. 4 and 5. The twofrequencies must differ from one another sufficiently so that oneaffects ion dissociation more than the other. And, it is preferable (butnot necessary) for the two frequencies to lie on opposite sides of ftransition of FIGS. 11A and 11B.

FIG. 16 depicts a first method for separately controlling ion energydistribution, ion density and ion dissociation using three RF powersources of different frequencies in a plasma reactor having three RFsources consisting of LF, HF and VHF frequencies sources, such as thereactor of FIG. 1. The method depends upon simultaneously applying VHFpower, HF power and LF power to the plasma (block 360 of FIG. 16). Theion energy content is adjusted (either to widen the ion energydistribution or to move the mean energy of the distribution peak orboth) relative to ion density (e.g., ion density may be kept constant ifdesired) by selecting a power ratio between the HF power source and theLF power source (block 361 of FIG. 16) within a continuous range ofratios corresponding to discrete or continuous ranges or continuums ofpower levels to which each of the two generators may be adjusted or set(e.g., the HF and LF generators 40 a, 40 b of FIG. 1). The iondissociation is adjusted relative to the ion density by selecting apower ratio between the VHF power source—e.g., generator 150 of FIG.1—and the HF power source—e.g., generator 40 b of FIG. 1—(block 362).For example, ion density may be adjusted relative to dissociation byadjusting only the HF power level. Or, dissociation may be adjustedwhile maintaining a constant density by adjusting the VHF power level toadjust dissociation while maintaining ion density at a constant level bymaking countervailing changes in the HF power level. This step (block362) may be performed before or with the step of block 361 so as to notlimit the choice of ion energy level or spread. The power levels of theLF, HF and VHF power sources are then set in accordance with theforegoing selections (block 363).

FIG. 17 depicts a second method for independently controlling ion energydistribution, ion density and ion dissociation using four RF powersources of different frequencies, in a plasma reactor of the typeillustrated in FIG. 4, 5 6 or 9. While the following description of FIG.17 refers to upper and lower VHF frequencies for independent control ofdensity and dissociation, it is understood that the frequency thatprovides dissociation control in FIG. 6 or FIG. 9 is not necessarily anupper VHF frequency but may instead be an HF or LF frequency driving theinductive power applicator (FIG. 6) or driving the toroidal powerapplicator (FIG. 9).

In FIG. 17, four frequencies are simultaneously applied to the plasma,specifically (in the case of FIGS. 4 and 5) an LF frequency, an HFfrequency, a lower VHF frequency and an upper VHF frequency (block 364).The ion energy content is adjusted (either to widen the ion energydistribution or to move the mean energy of the distribution peak orboth) by selecting an appropriate power ratio between the HF powersource and the LF power source (block 365 of FIG. 17) from a continuousrange or continuum of such ratios. The ion dissociation is adjustedrelative to the ion density by selecting a power ratio between the lowerVHF power source and the upper VHF power source (block 366) from a rangeor continuum of such ratios. The power levels of the LF, HF, lower VHFand upper VHF power sources are then set in accordance with theforegoing selections (block 367).

FIG. 18 is a three-dimensional graph depicting the simultaneousbehaviors of ion density and ion dissociation as functions of magneticfield strength. As indicated in FIG. 18, changing the strength of themagnetic field created by the coils 501, 502, 503, 504 of FIG. 2 changesonly the plasma ion density and does not affect the ion dissociationappreciably. FIG. 19 is a three-dimensional graph depicting thesimultaneous behaviors of ion density and ion dissociation as functionsof VHF source power level. FIG. 19 indicates that changes in VHF poweraffect both ion density and ion dissociation. Therefore, by adjustingboth VHF power and magnetic field strength, ion density and iondissociation may be set at independently selected levels.

FIG. 20 depicts a method of independently controlling ion energydistribution, ion density and ion dissociation in a reactor of the typehaving pair of RF bias power sources, a VHF power source and a magneticfield source, such as the reactor of FIG. 2. The method relies uponsimultaneously applying a magnetic field, VHF power HF power and LFpower to the plasma (block 368 of FIG. 20). The ion energy content isadjusted (either to widen the ion energy distribution or to move themean energy of the distribution peak or both) by selecting a power ratiobetween the HF power source and the LF power source (block 369). The iondissociation is adjusted relative to the ion density by selecting apower level for the VHF power source and selecting a magnetic fieldstrength to be provided by the magnetic field controller 505 of FIG. 2(block 370). The power levels of the LF, HF and VHF power sources andthe magnetic field strength of the controller 504 are then set inaccordance with the foregoing selections (block 371).

While the invention has been described in detail by specific referenceto preferred embodiments, it is understood that variations andmodifications thereof may be made without departing from the true spiritand scope of the invention.

1. A method of processing a workpiece in a plasma reactor, comprising:coupling RF power from three RF power sources of three respectivefrequencies and a magnetic field to plasma in said reactor; setting ionenergy distribution shape by selecting a ratio between the power levelsof a first pair of said at least three RF power sources; and setting iondissociation and ion density by selecting a ratio between the powerlevel of the remaining one of said three RF power sources and thestrength of said magnetic field.
 2. The method of claim 1 wherein saidat least three respective frequencies comprise an LF frequency, an HFfrequency and a VHF frequency, and wherein said first pair correspondsto said LF and HF frequencies and said remaining RF power sourcecorresponds to a VHF frequency.
 3. The method of claim 1 wherein saidmagnetic field is a low frequency magnetic field.
 4. The method of claim1 wherein the step of coupling RF power comprises coupling saidremaining RF source power applicator to an inductively coupled sourcepower applicator.
 5. The method of claim 1 wherein the step of couplingRF power comprises coupling said remaining RF power source to a toroidalplasma source power applicator.
 6. The method of claim 1 wherein thestep of coupling RF power comprises coupling said three frequenciesthrough a wafer support pedestal of said reactor.
 7. The method of claim1 wherein the step of coupling RF power comprises coupling LF and HFfrequencies through a wafer support pedestal and coupling a VHFfrequency through a ceiling of the reactor.
 8. The method of claim 1wherein said first pair comprises a first frequency that is less than anion transit frequency and a second frequency that is greater than saidion transit frequency.
 9. The method of claim 8 wherein the step ofsetting said ion energy distribution comprises adjusting the energydifference between a pair of peaks of the ion energy distribution. 10.The method of claim 8 wherein the step of setting said ion energydistribution comprises adjusting the ion population near one of a pairof peaks of the ion energy distribution relative to the other.
 11. Themethod of claim 8 wherein the step of setting said ion energydistribution comprises adjusting the energy of one of a pair of peaks ofthe ion energy distribution.
 12. A plasma reactor for processing aworkpiece, comprising: a reactor chamber having RF power couplingapparatus; a first pair of RF power sources coupled to said RF powercoupling apparatus and having a pair of frequencies whose power ratioaffects ion energy distribution; a third RF power source having afrequency affecting ion dissociation and ion density; and a magneticfield source affecting ion density, whereby the ratio between the powerof said third RF power source and the strength of said magnetic fieldaffects ion density and ion disassociation.
 13. The plasma reactor ofclaim 12 wherein said RF power coupling apparatus comprises a wafersupport pedestal and a ceiling of the reactor, and wherein said firstpair of RF power sources is coupled to said wafer support pedestal andsaid third RF power source is coupled to said ceiling electrode.
 14. Theplasma reactor of claim 12 wherein the frequencies of said first pair ofRF power sources are above and below, respectively, an ion transit timeof a plasma in said reactor.
 15. The plasma reactor of claim 14 whereinthe frequency of said third RF power sources is in a frequency range atwhich RF power contributes both ion dissociation and ion density. 16.The plasma reactor of claim 12 wherein said magnetic field sourcecomprises plural conductive loops facing respective sides of saidreactor and a current source governing current flow through said loops.17. The plasma reactor of claim 16 wherein said current source is a lowfrequency current source.
 18. A method of processing a workpiece in aplasma reactor, comprising: coupling RF power from plural RF powersources of respective frequencies and a magnetic field to plasma in saidreactor; setting ion energy distribution shape by selecting a ratiobetween the power levels of a pair of said plural RF power sources; andsetting ion dissociation and ion density by selecting a ratio betweenthe power level of one of said plural RF power sources and the strengthof said magnetic field.
 19. The method of claim 18 wherein said magneticfield is a low frequency magnetic field.